Advanced Nanotechnology III University of Tsukuba
Course Overview
The baisc structure of semiconductor devices is a pn junction formed by impurity doping. This course provides the basics such as control of carrier type and carrier concentration by impurity doping into semiconductors. This course will be given by invited professors from abroad.
Learning Achievement
Students will learn to understand the physical properties of semiconductors from the physical fundamentals and how devices are realized by skillfully utilizing these properties.
Competence
Course prerequisites
Grading Philosophy
Evaluation will be based on homework assignments in each lecture and a presentation as the final exam.
Course schedule
This lecture will be given in English by faculty members of the Overseas invitation program. Please refer to the Summer School website for the course outline, list of lecturers, and itinerary. https://tia-edu.jpIntroduction to the various semiconductor materials and general conceptsSemiconductor doping by diffusion Peculiarities of wide bandgap semiconductorsSemiconductor doping by ion implantationBasic phenomena in semiconductor opticsElementary electronic devicesExamples of advanced devicesPresentation by students
Course type
Lectures
Online Course Requirement
Instructor
Kuroda Shinji
Other information
Site for Inquiry
Link to the syllabus provided by the university