Advanced Nanotechnology III University of Tsukuba
The baisc structure of semiconductor devices is a pn junction formed by impurity doping. This course provides the basics such as control of carrier type and carrier concentration by impurity doping into semiconductors. This course will be given by invited professors from abroad.
Students will learn to understand the physical properties of semiconductors from the physical fundamentals and how devices are realized by skillfully utilizing these properties.
Evaluation will be based on homework assignments in each lecture and a presentation as the final exam.
This lecture will be given in English by faculty members of the Overseas invitation program. Please refer to the Summer School website for the course outline, list of lecturers, and itinerary. https://tia-edu.jpIntroduction to the various semiconductor materials and general conceptsSemiconductor doping by diffusion Peculiarities of wide bandgap semiconductorsSemiconductor doping by ion implantationBasic phenomena in semiconductor opticsElementary electronic devicesExamples of advanced devicesPresentation by students
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Link to the syllabus provided by the university